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Vgs - Gate-Source Voltage :
Minimum Operating Temperature :
Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
IRLIB9343PBF
1+
$1.540
10+
$1.320
100+
$1.010
500+
$0.892
RFQ
3,400
In-stock
IR / Infineon MOSFET 1 P-CH -55V HEXFET 105mOhms 31nC 20 V Through Hole TO-220-3 - 40 C + 175 C Tube 1 Channel Si P-Channel - 55 V - 14 A 170 mOhms - 1 V 31 nC Enhancement
DMP2008UFG-13
1+
$0.550
10+
$0.452
100+
$0.276
1000+
$0.213
3000+
$0.182
RFQ
1,257
In-stock
Diodes Incorporated MOSFET 20V P-CH MOSFET +/- 8 V SMD/SMT PowerDI3333-8 - 55 C + 150 C Reel 1 Channel Si P-Channel - 20 V - 14 A 8 mOhms - 1 V 72 nC Enhancement
SSM6J511NU,LF
1+
$0.540
10+
$0.363
100+
$0.203
1000+
$0.148
3000+
$0.127
RFQ
9,000
In-stock
Toshiba MOSFET Small-signal MOSFET Power MGMT switch +/- 10 V SMD/SMT UDFN6B-6   + 150 C Reel 1 Channel Si P-Channel - 12 V - 14 A 6.5 mOhms - 1 V 47 nC Enhancement
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