- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,889
In-stock
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Diodes Incorporated | MOSFET P-Chan 60V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 8.2 A | 85 mOhms | - 1 V | 12.1 nC | Enhancement | |||
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2,710
In-stock
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Nexperia | MOSFET 30V P-channel MOSFET | 12 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 85 mOhms | - 1 V | 7.8 nC | Enhancement |
