- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,935
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -20V 9A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | - 1 V | 42 nC | ||||
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2,218
In-stock
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Nexperia | MOSFET 20V Single P-channel Trench MOSFET | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.2 A | 80 mOhms | - 1 V | 7.5 nC | Enhancement | |||
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2,710
In-stock
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Nexperia | MOSFET 30V P-channel MOSFET | 12 V | SMD/SMT | DFN2020-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 85 mOhms | - 1 V | 7.8 nC | Enhancement | |||
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2,775
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET VDSS -20V -12VGSS | 12 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 134 mOhms | - 1 V | Enhancement | ||||
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VIEW | Fairchild Semiconductor | MOSFET Multi Market MOSFET | 12 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 1.5 A | 136 mOhms | - 1 V | 3.8 nC |
