- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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870
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | |||||
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3,350
In-stock
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Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement | ||||||
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9,905
In-stock
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Diodes Incorporated | MOSFET P-Ch 30V 0.35VnC Enh Mode FET -0.2A | 10 V | SMD/SMT | X2-DFN0606-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 200 mA | 10 Ohms | - 1 V | 0.35 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET P-Channel -20V FET 8Vgss 0.35W | 10 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 200 mA | 15 Ohms | - 1 V | Enhancement | ||||||
|
VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | PowerDI |