- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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30,227
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K | 8 V | SMD/SMT | X2-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 700 mA | 1 Ohms | - 1 V | 0.5 nC | Enhancement | |||
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19,640
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1 Ohms | - 1 V | 0.8 nC | Enhancement | |||
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2,660
In-stock
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Nexperia | MOSFET 12V P-channel Trench MOSFET | 8 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 3.2 A | 59 mOhms | - 1 V | 12 nC | Enhancement | |||
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2,480
In-stock
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Diodes Incorporated | MOSFET Dual P-Channel | 8 V | SMD/SMT | SOT-363-6 | - 65 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 430 mA | 900 mOhms | - 1 V | Enhancement | ||||
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4,547
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 5 Ohms | - 1 V | 0.4 nC | Enhancement | |||
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3,950
In-stock
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Diodes Incorporated | MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 20 mA | 800 mOhms | - 1 V | 0.84 nC | Enhancement | |||
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21,578
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | ||||
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4,411
In-stock
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Toshiba | MOSFET PWR MGT 1.5V Drive P-Ch MOS -20V | 8 V | SMD/SMT | UDFN6B-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 10 A | 15.3 mOhms | - 1 V | 29.9 nC | Enhancement |
