- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
19,640
In-stock
|
Diodes Incorporated | MOSFET 20V P-Ch Enh FET 20VDS 8VGS 49pF | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 1 Ohms | - 1 V | 0.8 nC | Enhancement | ||||
|
4,547
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X2-DFN0806-3 T&R 10K | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 330 mA | 5 Ohms | - 1 V | 0.4 nC | Enhancement | ||||
|
3,950
In-stock
|
Diodes Incorporated | MOSFET 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 20 mA | 800 mOhms | - 1 V | 0.84 nC | Enhancement |