- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,935
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -20V 9A | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 20 V | - 9 A | 18 mOhms | - 1 V | 42 nC | ||||||
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1,602
In-stock
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Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 4.8 A | 55 mOhms | - 1 V | 23 nC | Enhancement | |||||
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573
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 70 mOhms | - 1 V | 59 nC | Enhancement | |||||
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2,115
In-stock
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Diodes Incorporated | MOSFET MOSFET,P-CHANNEL 60V, -3.4A/-2.8A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.7 A | 125 mOhms | - 1 V | 9 nC | ||||||
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GET PRICE |
22,850
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 19.5 A | 16 mOhms | - 1 V | 16.5 nC | Enhancement | ||||
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729
In-stock
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Diodes Incorporated | MOSFET Dual P-Ch 60V Enh 2.15W -1Vgs 1021pF | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 3.9 A | 125 mOhms | - 1 V | 24.2 nC | Enhancement | |||||
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130
In-stock
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Diodes Incorporated | MOSFET Dl 60V P-Chnl UMOS | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 60 V | - 3.2 A | 190 mOhms | - 1 V | 17.7 nC | Enhancement | |||||
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2,930
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 4.9A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 76 mOhms | - 1 V | 23 nC | Enhancement | |||||
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2,475
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 18 A | 16 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | ||||
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VIEW | Diodes Incorporated | MOSFET Single -30V P-Ch Enh FET -20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 17 mOhms | - 1 V | 60.4 nC | Enhancement | |||||
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VIEW | Vishay Semiconductors | MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 15 A | 0.013 Ohms | - 1 V | 38 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET MOSFT PCh -30V -5.8A 45mOhm 39.3nC | SMD/SMT | SO-8 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 45 mOhms | - 1 V | 59 nC |