- Vgs - Gate-Source Voltage :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,923
In-stock
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Nexperia | MOSFET 40V P-channel Trench MOSFET | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 1.5 A | 400 mOhms | - 1 V | 4.7 nC | Enhancement | ||||
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6,775
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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44,430
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 760 mA | 600 mOhms | - 1 V | 3.4 nC | |||||
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648
In-stock
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Siliconix / Vishay | MOSFET P-Channel 12V AEC-Q101 Qualified | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 5 A | 0.042 Ohms | - 1 V | 13 nC | Enhancement | TrenchFET | |||
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12,549
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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21,578
In-stock
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Toshiba | MOSFET P-Ch Sm Sig FET Id -6A -20V -8VGSS | 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 6 A | 47.4 mOhms | - 1 V | 12.8 nC | |||||
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20,108
In-stock
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Toshiba | MOSFET Small-signal MOSFET Vdss= -12V, ID= -6A | +/- 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 6 A | 13.9 mOhms | - 1 V | 19.5 nC | Enhancement | |||||
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11,841
In-stock
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Toshiba | MOSFET Small-Signal MOSFET | +/- 8 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 3.9 A | 240 mOhms | - 1 V | 4.6 nC | Enhancement | ||||
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14,820
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 50mOhm -10Vgs -4.3A | 25 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.3 A | 35 mOhms | - 1 V | 11.8 nC | Enhancement | ||||
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5,900
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | +/- 12 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.4 A | 136 mOhms | - 1 V | 3.4 nC | Enhancement |
