- Vgs - Gate-Source Voltage :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,000
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | ||||
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870
In-stock
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Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | ||||
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1,309
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 8.7 A | 13 mOhms | - 1 V | 16.5 nC | Enhancement | PowerDI | |||
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1,257
In-stock
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Diodes Incorporated | MOSFET 20V P-CH MOSFET | +/- 8 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 14 A | 8 mOhms | - 1 V | 72 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh FET 30Vgss -80A Idm | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 11.5 A | 18 mOhms | - 1 V | 41 nC | Enhancement | ||||
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VIEW | Diodes Incorporated | MOSFET 20V P-Ch Enh Mode 10Vgss 5404pF 64nC | 10 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 17.5 A | 7 mOhms | - 1 V | 140 nC | Enhancement | PowerDI |
