- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Rds On - Drain-Source Resistance :
25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
45,200
In-stock
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Nexperia | MOSFET PSMN1R5-30BLE/SOT404/D2PAK | - 20 V, + 20 V | Tape & Reel (TR) | 1 Channel | 401 W | N-Channel | 30 V | 120 A | 1.3 mOhms | 1.7 V | 228 nC | D2PAK-3 (TO-263-3) | 800 | Green available | |||||||||
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6,827
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 1.7 mOhms | 1.7 V | 51 nC | |||||||||
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4,601
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 2.6 mOhms | 1.7 V | 54 nC | PowerTrench | ||||||||||
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2,580
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.4 mOhms | 1.7 V | 20 nC | PowerTrench SyncFET | ||||||||
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9,067
In-stock
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Diodes Incorporated | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 6.7 A | 30 mOhms | 1.7 V | 6 nC | Enhancement | ||||||||
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2,969
In-stock
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onsemi | MOSFET FETKY SO8FL 30V 129A 1.3M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 207 A | 1.4 mOhms | 1.7 V | 84 nC | |||||||||
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45,490
In-stock
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onsemi | MOSFET NFET SO8FL 30V 160A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 106 A | 2.1 mOhms | 1.7 V | 47.9 nC | |||||||||
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4,238
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 24 A | 2.2 mOhms | 1.7 V | 34 nC | Enhancement | PowerTrench SyncFET | ||||||||
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2,854
In-stock
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Fairchild Semiconductor | MOSFET PT8 30V/20V Nch PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 29 A | 1.5 mOhms | 1.7 V | 78 nC | Enhancement | PowerTrench SyncFET | |||||||
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1,306
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.8 mOhms | 1.7 V | 16 nC | PowerTrench SyncFET | ||||||||
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6,090
In-stock
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onsemi | MOSFET NFET DPAK 30V 41A 8.0 mOhm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 8 mOhms | 1.7 V | 17.5 nC | ||||||||||||
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3,996
In-stock
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Infineon Technologies | MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.2 mOhms | 1.7 V | 29 nC | |||||||||
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8,494
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 6 M Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC | |||||||||
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5,272
In-stock
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Infineon Technologies | MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 6.8 mOhms | 1.7 V | 26 nC | Enhancement | ||||||||
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2,408
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 2.95 mOhms | 1.7 V | 59 nC | |||||||||
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424
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2 mOhms | 1.7 V | 41 nC | Enhancement | PowerTrench SyncFET | ||||||||
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33,000
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 30 V | 125 W | 1.9 mOhms | 1.7 V | 40 nC | Enhancement | |||||||||
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109
In-stock
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Infineon Technologies | MOSFET 30V 179A 2.2 mOhm 36 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 179 A | 2.2 mOhms | 1.7 V | 36 nC | |||||||||
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858
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 21 mOhms | 1.7 V | 13.2 nC | Enhancement | ||||||||
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4,800
In-stock
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Infineon Technologies | MOSFET MOSF N CH 30V 34A DIRECTFET MT | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 192 A | 1.9 mOhms | 1.7 V | 51 nC | Directfet | ||||||||
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4,370
In-stock
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Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 11 mOhms | 1.7 V | 6 nC | NexFET | ||||||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 21 mOhms | 1.7 V | 13.2 nC | Enhancement | PowerDI | |||||||
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1,679
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.9 mOhms | 1.7 V | 39 nC | |||||||||
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15,000
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 6 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC | |||||||||
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1,844
In-stock
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STMicroelectronics | MOSFET N-Ch 30V 0.0042 Ohm 75A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 75 A | 5.9 mOhms | 1.7 V | 17 nC | Enhancement |
