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Pd - Power Dissipation :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
Factory Pack Quantity :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Packaging Number of Channels Pd - Power Dissipation Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Package Factory Pack Quantity RoHS
PSMN1R5-30BLEJ
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RFQ
45,200
In-stock
Nexperia MOSFET PSMN1R5-30BLE/SOT404/D2PAK - 20 V, + 20 V Tape & Reel (TR) 1 Channel 401 W N-Channel 30 V 120 A 1.3 mOhms 1.7 V 228 nC D2PAK-3 (TO-263-3) 800 Green available
BSC0804LSATMA1
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RFQ
4,692
In-stock
Infineon Technologies MOSFET TRENCH >=100V - 20 V, + 20 V Tray 1 Channel 83 W   100 V 40 A 10.3 mOhms 1.7 V 12 nC TDSON-8 5000 Green available
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