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- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,090
In-stock
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onsemi | MOSFET NFET DPAK 30V 41A 8.0 mOhm | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 30 V | 12.1 A | 8 mOhms | 1.7 V | 17.5 nC | ||||||||
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1,977
In-stock
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onsemi | MOSFET NFET DPAK 60V 9A 170MOHM | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 9 A | 153 mOhms | 1.7 V | 4.7 nC | |||||
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109
In-stock
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Infineon Technologies | MOSFET 30V 179A 2.2 mOhm 36 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 179 A | 2.2 mOhms | 1.7 V | 36 nC | |||||
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2,488
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 9.6 mOhms | 1.7 V | 30 nC | Enhancement |