- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,827
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 1.7 mOhms | 1.7 V | 51 nC | |||||
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2,102
In-stock
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Fairchild Semiconductor | MOSFET 25V 20A 7.5mOhm N-Ch PowerTrench | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 7.5 mOhms | 1.7 V | PowerTrench | ||||||
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2,580
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.4 mOhms | 1.7 V | 20 nC | PowerTrench SyncFET | ||||
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1,971
In-stock
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Fairchild Semiconductor | MOSFET 25V 40A 2mOhm N-CH PowerTrench SyncFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 2 mOhms | 1.7 V | SyncFET | ||||||
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2,969
In-stock
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onsemi | MOSFET FETKY SO8FL 30V 129A 1.3M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 207 A | 1.4 mOhms | 1.7 V | 84 nC | |||||
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45,490
In-stock
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onsemi | MOSFET NFET SO8FL 30V 160A 2.1MO | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 106 A | 2.1 mOhms | 1.7 V | 47.9 nC | |||||
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1,306
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 49 A | 2.8 mOhms | 1.7 V | 16 nC | PowerTrench SyncFET | ||||
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7,925
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh FET 300V 20Vgs 0.25A 0.31W | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 550 mA | 4 Ohms | 1.7 V | 7.6 nC | Enhancement | ||||
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3,996
In-stock
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Infineon Technologies | MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 19 A | 5.2 mOhms | 1.7 V | 29 nC | |||||
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8,494
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 6 M Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC | |||||
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5,272
In-stock
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Infineon Technologies | MOSFET MOSFET, 30V, 25A, 4 3nC Qg, PQFN 3.3x3.3 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16 A | 6.8 mOhms | 1.7 V | 26 nC | Enhancement | ||||
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2,408
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 2.95 mOhms | 1.7 V | 59 nC | |||||
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652
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.3 A | 100 mOhms | 1.7 V | 4.1 nC | PowerTrench | ||||
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415
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 61V 100V N-Ch 3A 401pF 8.3nC | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.3 A | 220 mOhms | 1.7 V | 8.3 nC | Enhancement | ||||
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858
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 21 mOhms | 1.7 V | 13.2 nC | Enhancement | ||||
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408
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V 75 mOhm | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 30 A | 75 mOhms | 1.7 V | 51 nC | Enhancement | ||||
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8,369
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.9 mOhms | 1.7 V | 5.8 nC | Enhancement | NexFET | |||
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4,800
In-stock
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Infineon Technologies | MOSFET MOSF N CH 30V 34A DIRECTFET MT | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 192 A | 1.9 mOhms | 1.7 V | 51 nC | Directfet | ||||
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3,000
In-stock
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Fairchild Semiconductor | MOSFET 25V 40A 3.2mOhm N-Ch PowerTrench SyncFET | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 3.2 mOhms | 1.7 V | SyncFET | ||||||
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4,370
In-stock
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Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 48 A | 11 mOhms | 1.7 V | 6 nC | NexFET | ||||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 25Vgss 1.0W 697pF | 25 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 8.5 A | 21 mOhms | 1.7 V | 13.2 nC | Enhancement | PowerDI | |||
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1,679
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 21 A | 4.9 mOhms | 1.7 V | 39 nC | |||||
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15,000
In-stock
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onsemi | MOSFET TRENCH 3.1 30V 6 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC |
