- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
-
- 1.7 A (1)
- 10 A (5)
- 10.3 A (1)
- 10.6 A (1)
- 106 A (1)
- 11 A (4)
- 12 A (2)
- 13 A (6)
- 15 A (2)
- 15.8 A (1)
- 17 A (2)
- 18 A (10)
- 19 A (1)
- 2.3 A (1)
- 20 A (6)
- 20.7 A (1)
- 21 A (1)
- 22 A (8)
- 23 A (2)
- 23.8 A (1)
- 24 A (4)
- 25 A (3)
- 26 A (4)
- 28 A (4)
- 3 A (1)
- 3.5 A (2)
- 3.7 A (2)
- 30 A (1)
- 30.8 A (1)
- 31 A (1)
- 31.5 A (1)
- 34 A (1)
- 35 A (2)
- 37 A (1)
- 38 A (1)
- 38.8 A (1)
- 4.4 A (2)
- 4.5 A (7)
- 4.6 A (1)
- 4.8 A (1)
- 40 A (2)
- 45 A (1)
- 47 A (4)
- 5 A (6)
- 50 A (2)
- 52 A (1)
- 53 A (1)
- 6 A (3)
- 6.2 A (1)
- 60 A (3)
- 66 A (2)
- 68 A (1)
- 7 A (1)
- 7.5 A (3)
- 76 A (2)
- 77 A (1)
- 8 A (5)
- 800 mA (2)
- 9 A (4)
- 9.7 A (1)
- 94 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.03 Ohms (2)
- 0.037 Ohms (1)
- 0.065 Ohms (1)
- 0.13 Ohms (4)
- 0.145 Ohms (5)
- 0.149 Ohms (1)
- 0.26 Ohms (1)
- 0.3 Ohms (2)
- 0.305 Ohms (2)
- 0.31 Ohms (1)
- 0.49 Ohms (2)
- 1.06 Ohms (4)
- 1.26 Ohms (2)
- 1.38 Ohms (1)
- 1.4 Ohms (1)
- 1.5 Ohms (1)
- 1.7 Ohms (1)
- 1.8 Ohms (1)
- 100 mOhms (1)
- 105 mOhms (1)
- 108 mOhms (4)
- 110 mOhms (6)
- 12.2 Ohms (2)
- 120 mOhms (7)
- 125 mOhms (1)
- 129 mOhms (1)
- 130 mOhms (1)
- 150 mOhms (3)
- 155 mOhms (1)
- 156 mOhms (1)
- 160 mOhms (1)
- 165 mOhms (3)
- 165 mOhns (1)
- 165 Ohms (1)
- 168 mOhms (3)
- 175 mOhms (1)
- 180 mOhms (2)
- 190 mOhms (3)
- 195 mOhms (1)
- 2.1 Ohms (1)
- 255 mOhms (3)
- 260 mOhms (2)
- 275 mOhms (1)
- 3.2 Ohms (1)
- 3.3 Ohms (1)
- 30 mOhms (2)
- 310 mOhms (2)
- 34 mOhms (1)
- 35 mOhms (1)
- 350 mOhms (2)
- 37 mOhms (1)
- 370 mOhms (3)
- 380 mOhms (3)
- 40 mOhms (1)
- 400 mOhms (1)
- 42 mOhms (1)
- 440 mOhms (4)
- 45 mOhms (3)
- 52 mOhms (1)
- 540 mOhms (1)
- 560 mOhms (3)
- 57 mOhms (1)
- 570 mOhms (1)
- 60 mOhms (2)
- 62 mOhms (1)
- 650 mOhms (1)
- 70 mOhms (2)
- 750 mOhms (1)
- 85 mOhms (2)
- 850 mOhms (1)
- 860 mOhms (4)
- 87 mOhms (1)
- 88 mOhms (2)
- 90 mOhms (2)
- 900 mOhms (3)
- 950 mOhms (1)
- 980 mOhms (2)
- 99 mOhms (1)
- Qg - Gate Charge :
-
- 105 nC (1)
- 107 nC (1)
- 109 nC (1)
- 112 nC (1)
- 118 nC (1)
- 12 nC (1)
- 120 nC (1)
- 121 nC (3)
- 13 nC (7)
- 13.5 nC (3)
- 135 nC (1)
- 14 nC (2)
- 14.5 nC (1)
- 15 nC (2)
- 150 nC (4)
- 154 nC (1)
- 16 nC (2)
- 16.5 nC (3)
- 160 nC (1)
- 17 nC (1)
- 19 nC (3)
- 20 nC (2)
- 21.5 nC (3)
- 215 nC (2)
- 22 nC (2)
- 23 nC (1)
- 24 nC (2)
- 25 nC (7)
- 260 nC (3)
- 27 nC (1)
- 280 nC (1)
- 29 nC (6)
- 308 nC (1)
- 31 nC (1)
- 32 nC (3)
- 34 nC (2)
- 35 nC (1)
- 36 nC (2)
- 37 nC (3)
- 39 nC (3)
- 4 nC (1)
- 4.5 nC (2)
- 4.6 nC (1)
- 4.9 nC (2)
- 40 nC (2)
- 42 nC (2)
- 43 nC (2)
- 45 nC (2)
- 45.5 nC (4)
- 46 nC (1)
- 47 nC (2)
- 505 nC (1)
- 53 nC (1)
- 54 nC (4)
- 55 nC (2)
- 57 nC (1)
- 58 nC (1)
- 6.7 nC (1)
- 60 nC (7)
- 68 nC (1)
- 70 nC (1)
- 75 nC (1)
- 8 nC (4)
- 8.5 nC (1)
- 8.6 nC (1)
- 8.8 nC (3)
- 84 nC (1)
- 87 nC (1)
- 9 nC (2)
- 9.4 nC (1)
- 90 nC (1)
- 98 nC (1)
145 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 23 A | 88 mOhms | 3 V | 34 nC | Enhancement | ||||
|
|
25,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 310 mOhms | 3 V | 19 nC | Enhancement | ||||
|
|
2,462
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
|
|
984
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | |||||
|
|
2,488
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.5 A | 1.38 Ohms | 3 V | 8.6 nC | Enhancement | ||||
|
|
2,206
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 570 mOhms | 3 V | 4 nC | Enhancement | ||||
|
|
968
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 11 A | 310 mOhms | 3 V | 19 nC | Enhancement | |||||
|
|
976
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 15 nC | Enhancement | |||||
|
|
908
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 10 A | 370 mOhms | 3 V | 16.5 nC | Enhancement | |||||
|
|
500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 17 A | 129 mOhms | 3 V | 23 nC | Enhancement | ||||
|
|
500
In-stock
|
Infineon Technologies | MOSFET HIGH POWER NEW | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 108 mOhms | 3 V | 27 nC | Enhancement | ||||
|
|
450
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 40 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 0.3 Ohms | 3 V | 13 nC | Enhancement | CoolMOS | ||||
|
|
435
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 18 A | 0.145 Ohms | 3 V | 25 nC | Enhancement | CoolMOS | ||||
|
|
14,117
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | |||||
|
|
13,174
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.86Ohm 5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 860 mOhms | 3 V | 8.8 nC | |||||
|
|
1,134
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 66 A | 42 mOhms | 3 V | 121 nC | Enhancement | |||||
|
|
2,434
In-stock
|
Fairchild Semiconductor | MOSFET Automotive / SuperFET1 / 600V / 4.6A / 1.05 OHM | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.6 A | 3.2 Ohms | 3 V | 16 nC | Enhancement | SuperFET | |||
|
|
11,151
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.7A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.7 A | 190 mOhms | 3 V | 87 nC | CoolMOS | ||||
|
|
537
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 275 mOhms | 3 V | 109 nC | Enhancement | SuperFET II | |||
|
|
384
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET II MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 195 mOhms | 3 V | 160 nC | Enhancement | SuperFET II | |||
|
|
180
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.031Ohm typ. 68A MDmesh M2 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 68 A | 30 mOhms | 3 V | 118 nC | |||||
|
|
GET PRICE |
13,710
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.092V Ohm 29A MDmesh II PWR MO | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31.5 A | 105 mOhms | 3 V | 84 nC | ||||
|
|
7,880
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V 20 A Mdmesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 165 mOhms | 3 V | 60 nC | |||||
|
|
1,238
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.255Ohm 13A MDmesh M2 | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13 A | 255 mOhms | 3 V | 21.5 nC | |||||
|
|
930
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 0.108Ohm 26A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 108 mOhms | 3 V | 45.5 nC | |||||
|
|
2,669
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.06 Ohms | 3 V | 8 nC | |||||
|
|
1,286
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 0.168 Ohm 18A Mdmesh M2 | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 168 mOhms | 3 V | 29 nC | ||||||
|
|
555
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 34 A | 88 mOhms | 3 V | 57 nC | Enhancement | ||||
|
|
848
In-stock
|
STMicroelectronics | MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 22 A | 0.13 Ohms | 3 V | 39 nC | Enhancement | |||||
|
|
GET PRICE |
61,110
In-stock
|
STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 22 A | 0.13 Ohms | 3 V | 39 nC | Enhancement |
