- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Packaging :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (1)
- 1.1 mOhms (1)
- 1.2 mOhms (1)
- 1.25 mOhms (1)
- 1.6 mOhms (2)
- 1.7 mOhms (1)
- 1.8 mOhms (1)
- 1.9 mOhms (2)
- 11.3 mOhms (1)
- 15.5 mOhms (1)
- 2 mOhms (1)
- 2.5 mOhms (1)
- 20 mOhms (1)
- 3 mOhms (1)
- 3.1 mOhms (1)
- 3.2 mOhms (2)
- 4 mOhms (1)
- 4.6 mOhms (1)
- 5.8 mOhms (1)
- 5.9 mOhms (2)
- 6.5 mOhms (1)
- 7 mOhms (2)
- 700 uOhms (1)
- 750 Ohms (2)
- 750 uOhms (1)
31 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
15,800
In-stock
|
NXP Semiconductors | MOSFET BUK7K6R8-40E/SOT1205/LFPAK56D | - 20 V, + 20 V | Tape & Reel (TR) | 2 Channel | 64 W | N-Channel | 40 V | 40 A | 5.8 mOhms | 3 V | 28.9 nC | LFPAK-56D-8 | 1500 | Green available | |||||||||
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2,480
In-stock
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STMicroelectronics | MOSFET N-channel 40 V, 3.8 mOhm typ., 120 A STripFET F6 Power M... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.5 mOhms | 3 V | 130 nC | Enhancement | ||||||||
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2,384
In-stock
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Fairchild Semiconductor | MOSFET 40V N Chan Shielded Gate Power Trench | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.1 mOhms | 3 V | 80 nC | PowerTrench Power Clip | |||||||||
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750
In-stock
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Fairchild Semiconductor | MOSFET 40V 2.4MOHM D2PAK-7L PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 219 A | 2 mOhms | 3 V | 84 nC | PowerTrench | ||||||||
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2,375
In-stock
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IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | Enhancement | StrongIRFET | |||||||
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897
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 uOhms | 3 V | 305 nC | Enhancement | CoolIRFet | |||||||
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2,376
In-stock
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IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | StrongIRFET | ||||||||||
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1,964
In-stock
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Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 217 A | 1.2 mOhms | 3 V | 123 nC | Enhancement | StrongIRFET | |||||||
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1,579
In-stock
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IR / Infineon | MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 259 A | 1.1 mOhms | 3 V | 129 nC | StrongIRFET | |||||||||||
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2,402
In-stock
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IR / Infineon | MOSFET 40V Single N-Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 84 A | 4.6 mOhms | 3 V | 44 nC | Enhancement | ||||||||
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2,220
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 17mOhms 15nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 9 A | 15.5 mOhms | 3 V | 15 nC | Enhancement | ||||||||
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2,709
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 40V 56A DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 3 mOhms | 3 V | 65 nC | Enhancement | StrongIRFET | |||||||
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2,756
In-stock
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onsemi | MOSFET NFET SO8FL 40V 110A 4.2MO | SMD/SMT | SO-FL-8 | Reel | Si | N-Channel | 40 V | 20 A | 6.5 mOhms | 3 V | 25 nC | |||||||||||||
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800
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 160A 4mOhm 93.3nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 4 mOhms | 3 V | 140 nC | |||||||||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.9 mOhms | 3 V | 130 nC | Enhancement | ||||||||
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990
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.9 mOhms | 3 V | 130 nC | Enhancement | ||||||||
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GET PRICE |
9,390
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 100A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.7 mOhms | 3 V | 91 nC | Enhancement | OptiMOS | ||||||
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1,286
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 7 A | 20 mOhms | 3 V | 19.1 nC | Enhancement | ||||||||
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12,500
In-stock
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onsemi | MOSFET NFET SO8FL 40V 75A 9.3MOH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 75 A | 11.3 mOhms | 3 V | 24 nC | |||||||||
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37
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4mOhms 93.3nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 160 A | 5.9 mOhms | 3 V | 140 nC | Enhancement | ||||||||
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872
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 40V 240A D2PAK-7 | 20 V | SMD/SMT | TO-263-7 | Reel | 1 Channel | Si | N-Channel | 40 V | 240 A | 1 MOhms | 3 V | 210 nC | Enhancement | StrongIRFET | |||||||||
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3,988
In-stock
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IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 70 A | 5.9 mOhms | 3 V | 40 nC | Enhancement | ||||||||
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1,600
In-stock
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Infineon Technologies | MOSFET 40V StrongIRFET 195A,1.6mOhm,216nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 3 V | 216 nC | StrongIRFET | ||||||||||
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3,596
In-stock
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Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement | ||||||||
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267
In-stock
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IR / Infineon | MOSFET HEXFET Power MOSFET 40V Single N-Channel | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.6 mOhms | 3 V | 216 nC | Enhancement | StrongIRFET | |||||||
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46,000
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_30/40V | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.2 mOhms | 3 V | 103 nC | Enhancement | ||||||||
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9,000
In-stock
|
Diodes Incorporated | MOSFET 40V N-Ch Enh FET 20Vgs 19.2A 74nC | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 14.4 A | 7 mOhms | 3 V | 34 nC | Enhancement | ||||||||
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VIEW | Renesas Electronics | MOSFET MP-3ZP PoTr-MOSFET Low | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3 V | 90 nC | ||||||||||
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3,500
In-stock
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STMicroelectronics | MOSFET N-channel 40 V 180 A STripFET Pwr MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.25 mOhms | 3 V | 340 nC | Enhancement | ||||||||
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164
In-stock
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IR / Infineon | MOSFET MOSFET N-CH 40V 240A D2PAK-7 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 362 A | 700 uOhms | 3 V | 210 nC | Enhancement | StrongIRFET |
