- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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391
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 445 mOhms | 3 V | 22 nC | Enhancement | ||||
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496
In-stock
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STMicroelectronics | MOSFET | +/- 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 12 A | 0.37 Ohms | 3 V | 29 nC | Enhancement | |||||
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1,934
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
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1,196
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | ||||
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290
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected MDmesh... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
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593
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
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2,341
In-stock
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Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 12 A | 170 mOhms | 3 V | 15.3 nC | Enhancement | StrongIRFET | |||
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1,000
In-stock
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STMicroelectronics | MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 0.26 Ohms | 3 V | 20 nC | Enhancement | ||||
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395
In-stock
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Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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20
In-stock
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IXYS | MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 600V 1... | 30 V | Through Hole | ISOPLUS-i4-PAK-5 | - 55 C | + 150 C | Tube | 2 Channel | Si | N-Channel | 600 V | 12 A | 350 mOhms | 3 V | 58 nC | |||||
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185
In-stock
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STMicroelectronics | MOSFET N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOS... | 25 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 12 A | 380 mOhms | 3 V | 33.3 nC | Enhancement | |||||
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2,669
In-stock
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Fairchild Semiconductor | MOSFET Single PT7 N in MLP3.3x3.3 Combo | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 14.5 mOhms | 3 V | 22 nC | ||||||
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61
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | ||||
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1,900
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | H2PAK-2 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | ||||
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200
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 12 A | 410 mOhms | 3 V | 30 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 0.35Ohm 12A MDmesh II | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 380 mOhms | 3 V | 33.3 nC | |||||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 173 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 12 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 12 A | 173 mOhms | 3 V | 23 nC | Enhancement | CoolMOS | |||
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129
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 12A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 299 mOhms | 3 V | 23 nC | CoolMOS |
