- Rds On - Drain-Source Resistance :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,046
In-stock
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Toshiba | MOSFET N-Ch 60V 42A 48W UMOSVIII 1440pF 22nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 42 A | 11.3 mOhms | 2 V to 4 V | 22 nC | Enhancement | |||||||
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1,438
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 130A 72nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 130 A | 1.9 mOhms | 2 V to 4 V | 72 nC | UMOSVIII | |||||
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19,440
In-stock
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Toshiba | MOSFET U-MOSVIII-H 100V 93A 58nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 93 A | 3.7 mOhms | 2 V to 4 V | 58 nC | UMOSVIII | |||||
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3,181
In-stock
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Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS150V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 28 mOhms | 2 V to 4 V | 10.6 nC | Enhancement | |||||
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4,090
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 85A 49nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 85 A | 3.8 mOhms | 2 V to 4 V | 49 nC | Enhancement | |||||
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4,017
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 55 A | 6.1 mOhms | 2 V to 4 V | 31 nC | Enhancement | |||||
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3,238
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 71A 38nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 71 A | 4.8 mOhms | 2 V to 4 V | 38 nC | Enhancement | |||||
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2,329
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 34A 16nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 34 A | 11 mOhms | 2 V to 4 V | 16 nC | Enhancement | |||||
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383
In-stock
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Toshiba | MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC | 20 V | SMD/SMT | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 7.4 mOhms | 2 V to 4 V | 33 nC | Enhancement | |||||||
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379
In-stock
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Toshiba | MOSFET N-Ch 80V 1490pF 22nC 12.3mOhm 44A 48W | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 44 A | 10.1 mOhms | 2 V to 4 V | 22 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET U-MOSVIII-H 80V 100A 59nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.3 mOhms | 2 V to 4 V | 59 nC | UMOSVIII | |||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 54 mOhms | 2 V to 4 V | 11.2 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Transistr95ohm250V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 95 mOhms | 2 V to 4 V | 11 nC | Enhancement |