- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,086
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
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2,958
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 90 A | 4.4 mOhms | 2 V | 69 nC | Enhancement | ||||
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4,658
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 4.1mOhms 67nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 4.1 mOhms | 2 V | 69 nC | |||||
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4,813
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 3.9 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
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1,216
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.6 mOhms | 2 V | 69 nC | Enhancement | OptiMOS | |||
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970
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 4.6 mOhms | 2 V | 69 nC | Enhancement | OptiMOS |
