- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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354
In-stock
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IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-263HV | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | ||||
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54
In-stock
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IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-247 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | ||||
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31
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 1.5 A | 40 Ohms | 2 V | 41 nC | Enhancement | |||
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57
In-stock
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IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-247HV | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement |
