- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
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4,625
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
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50,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
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833
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | ||||
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2,484
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | |||||
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46,200
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | |||||
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985
In-stock
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onsemi | MOSFET NFET 60V 34A 18MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 16 mOhms | 2 V | 29 nC | ||||||
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3,422
In-stock
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Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 16 mOhms | 2 V | 2.9 nC | Enhancement | NexFET | ||||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 33.3nC 2.0W | 10 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 44 A | 16 mOhms | 2 V | 33.3 nC | Enhancement | PowerDI | ||||
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60,000
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS |