- Vgs - Gate-Source Voltage :
- Mounting Style :
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- Rds On - Drain-Source Resistance :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,613
In-stock
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Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 10 mOhms | 2 V | 16 nC | PowerTrench | ||||||
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3,848
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 8.5 mOhms | 2 V | 16 nC | PowerTrench | ||||
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11,481
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 18 A | 3.5 mOhms | 2 V | 16 nC | Enhancement | OptiMOS | |||
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975
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 395 mOhms | 2 V | 16 nC | Enhancement | |||||
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2,000
In-stock
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Vishay Semiconductors | MOSFET 150V Vds 42A Id 10.5nC Qg Typ. | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 150 V | 42 A | 0.0372 Ohms | 2 V | 16 nC | Enhancement |
