- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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827
In-stock
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Fairchild Semiconductor | MOSFET PT5 150V/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 45 A | 9.5 mOhms | 2 V | 45 nC | Enhancement | PowerTrench Power Clip | |||
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2,719
In-stock
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Fairchild Semiconductor | MOSFET PT5 120/20V Nch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 64 A | 6 mOhms | 2 V | 45 nC | Enhancement | PowerTrench Power Clip | |||
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404
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 20 A | 215 mOhms | 2 V | 45 nC | Enhancement | ||||
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1,490
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 69 A | 5.7 mOhms | 2 V | 45 nC | Enhancement |
