- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,135
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
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1,907
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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785
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | ||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | ||||
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1,732
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | OptiMOS | |||
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446
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
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469
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
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333
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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30
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 67 A | 38 mOhms | 2 V | 225 nC | Enhancement | |||||
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19
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 56 A | 45 mOhms | 2 V | 195 nC | Enhancement | |||||
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12
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 100 A | 22 mOhms | 2 V | 435 nC | Enhancement | |||||
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490
In-stock
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Siliconix / Vishay | MOSFET N-Channel 200V TO-220 | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 64 A | 0.018 Ohms | 2 V | 48 nC | Enhancement |
