- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
138
In-stock
|
onsemi | MOSFET NCH 1500V 9A | 30 V | Through Hole | TO-3PF-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1500 V | 9 A | 3 Ohms | 2 V | 114 nC | Enhancement | ||||
|
|
975
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 9 A | 395 mOhms | 2 V | 16 nC | Enhancement |
