3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
6,630
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 70 mOhms | 2 V | 70 nC | Enhancement | ||||
|
200
In-stock
|
STMicroelectronics | MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 42 A | 70 mOhms | 2 V | 70 nC | Enhancement | |||||
|
42
In-stock
|
Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 48 A | 70 mOhms | 2 V | 225 nC | Enhancement |