- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
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24 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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81
In-stock
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IXYS | MOSFET 60V/220A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 220 A | 4 mOhms | 2 V | 136 nC | Enhancement | HiPerFET | |||
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1,688
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 34 A | 87 mOhms | 2 V | 55 nC | Enhancement | |||||
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522
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49 A | 49 mOhms | 2 V | 93 nC | Enhancement | |||||
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6,630
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 42 A | 70 mOhms | 2 V | 70 nC | Enhancement | ||||
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909
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 32 A | 87 mOhms | 2 V | 56.5 nC | Enhancement | |||||
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589
In-stock
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STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 12 A | 0.26 Ohms | 2 V | 20 nC | Enhancement | |||||
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327
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 188 nC | Enhancement | ||||
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270
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.150 Ohm typ., 20 A MDmesh M2 EP Power ... | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 20 A | 163 mOhms | 2 V | 33 nC | Enhancement | |||||
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511
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 280 mOhms | 2 V | 21.5 nC | Enhancement | ||||
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54
In-stock
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IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-247 | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | |||||
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57
In-stock
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IXYS | MOSFET 2000V/1A HV Power MOSFET, TO-247HV | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 2000 V | 1 A | 40 Ohms | 2 V | 23.5 nC | Enhancement | |||||
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200
In-stock
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STMicroelectronics | MOSFET N-channel 600 V, 0.06 Ohm typ., 42 A MDmesh M2 Power MOS... | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 42 A | 70 mOhms | 2 V | 70 nC | Enhancement | |||||
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72
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 52 A | 45 mOhms | 2 V | 91 nC | Enhancement | |||||
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174
In-stock
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IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 120 A | 3.7 mOhms | 2 V | 210 nC | Enhancement | ||||
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505
In-stock
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onsemi | MOSFET Power MOSFET 600V 6.8A 745 m_ Single | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6.6 A | 610 mOhms | 2 V | 15 nC | Enhancement | ||||
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85
In-stock
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IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.9 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 | |||
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41
In-stock
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IXYS | MOSFET 60V/270A TrenchT3 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | SiC | N-Channel | 60 V | 270 A | 3.1 mOhms | 2 V | 200 nC | Enhancement | HiPerFET | |||
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792
In-stock
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Wolfspeed / Cree | MOSFET SiC Power MOSFET 1700V, 72A | - 5 V, + 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1700 V | 72 A | 45 mOhms | 2 V | 188 nC | Enhancement | ||||
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48
In-stock
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IXYS | MOSFET 40V/270A TrenchT4 Power MOSFET | 15 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.4 mOhms | 2 V | 182 nC | Enhancement | TrenchT4 | |||
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30
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 67 A | 38 mOhms | 2 V | 225 nC | Enhancement | |||||
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19
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 56 A | 45 mOhms | 2 V | 195 nC | Enhancement | |||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 300 V | 48 A | 70 mOhms | 2 V | 225 nC | Enhancement | |||||
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438
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 68 A | 0.03 Ohms | 2 V | 118 nC | Enhancement |
