- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,800
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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400
In-stock
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Fairchild Semiconductor | MOSFET 60V SG N-channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 10.8 mOhms | 2 V | 35 nC | Enhancement | ||||
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782
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
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813
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 20 A | 150 mOhms | 2 V | 35 nC | Enhancement | |||||
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516
In-stock
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onsemi | MOSFET NCH 100A 100V TO-263 | 20 V | SMD/SMT | TO-263-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 5.7 mOhms | 2 V | 35 nC | Enhancement |
