- Vgs - Gate-Source Voltage :
- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
-
- 1.7 mOhms (2)
- 10.5 mOhms (1)
- 10.7 mOhms (2)
- 105 mOhms (3)
- 11 mOhms (3)
- 12.8 mOhms (1)
- 15.5 mOhms (2)
- 150 mOhms (1)
- 155 mOhms (1)
- 2 mOhms (4)
- 2.3 mOhms (3)
- 2.8 mOhms (2)
- 28 mOhms (1)
- 3.2 mOhms (1)
- 3.3 mOhms (2)
- 3.5 mOhms (2)
- 3.6 mOhms (3)
- 3.7 mOhms (1)
- 3.9 mOhms (3)
- 30 mOhms (1)
- 4.2 mOhms (2)
- 4.5 mOhms (1)
- 4.8 mOhms (2)
- 44 mOhms (2)
- 5.7 mOhms (2)
- 5.9 mOhms (1)
- 6.2 mOhms (3)
- 6.6 mOhms (1)
- 7 mOhms (2)
- 7.2 mOhms (3)
- 8 mOhms (1)
- 9.3 mOhms (2)
- 9.4 mOhms (2)
- Qg - Gate Charge :
-
- 114.6 nC (2)
- 116 nC (1)
- 117 nC (7)
- 131 nC (1)
- 150 nC (1)
- 170 nC (3)
- 188 nC (1)
- 200 nC (4)
- 206 nC (4)
- 207 nC (2)
- 210 nC (1)
- 22.7 nC (2)
- 25 nC (2)
- 26 nC (1)
- 34 nC (3)
- 35 nC (7)
- 36 nC (1)
- 40 nC (1)
- 49.3 nC (1)
- 55 nC (4)
- 64 nC (1)
- 65 nC (1)
- 66 nC (2)
- 68 nC (4)
- 79 nC (1)
- 81 nC (1)
- 84 nC (1)
- 88 nC (1)
- 95 nC (2)
- Tradename :
63 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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2,518
In-stock
|
Infineon Technologies | MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 59 A | 10.5 mOhms | 2 V | 35 nC | Enhancement | ||||
|
|
7,873
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 3.5 mOhms | 2 V | 200 nC | Enhancement | ||||
|
|
29,560
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
|
805
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 210 A | 2.8 mOhms | 2 V | 79 nC | Enhancement | PowerTrench | |||
|
|
2,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
1,837
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | |||
|
|
421
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
1,254
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
|
1,919
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | ||||
|
|
1,320
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
14,250
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
|
|
1,076
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | ||||
|
|
GET PRICE |
13,330
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
3,270
In-stock
|
onsemi | MOSFET NFET DPAK 100V 34A 37MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 30 mOhms | 2 V | 40 nC | |||||
|
|
637
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 4.5 mOhms | 2 V | 114.6 nC | Enhancement | ||||
|
|
3,109
In-stock
|
IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | ||||
|
|
1,876
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 67 A | 9.3 mOhms | 2 V | 65 nC | Enhancement | ||||
|
|
2,826
In-stock
|
Infineon Technologies | MOSFET AUTO 100V 1 N-CH HEXFET 105mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 105 mOhms | 2 V | 34 nC | Enhancement | ||||
|
|
2,473
In-stock
|
Diodes Incorporated | MOSFET 100V 175c N-Ch FET 28mOhm 10V 55A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2 V | 36 nC | Enhancement | ||||
|
|
214
In-stock
|
Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 6.6 mOhms | 2 V | 84 nC | Enhancement | ||||
|
|
276
In-stock
|
Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 2 V | 81 nC | Enhancement | ||||
|
|
GET PRICE |
12,030
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
346
In-stock
|
IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | |||
|
|
102
In-stock
|
IXYS | MOSFET 3-Phase Full Bridge with Trench MOSFETs | 15 V | SMD/SMT | ISOPLUS-DIL-17 | - 55 C | + 175 C | 6 Channel | Si | N-Channel | 100 V | 120 A | 3.2 mOhms | 2 V | 88 nC | Enhancement | |||||
|
|
GET PRICE |
18,600
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||
|
|
759
In-stock
|
IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | |||
|
|
1,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 58 A | 10.7 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | |||
|
|
1,101
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | ||||
|
|
305
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
327
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 75 / 80 | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 188 nC | Enhancement |
