- Package / Case :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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805
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 210 A | 2.8 mOhms | 2 V | 79 nC | Enhancement | PowerTrench | |||
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346
In-stock
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IR / Infineon | MOSFET 100V N-CH 142A 3.5 mOhm 200nC | 20 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 124 A | 2.8 mOhms | 2 V | 200 nC | Enhancement | Directfet | |||
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479
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power ... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.8 mOhms | 2 V | 55 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 80V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.8 mOhms | 2 V | 117 nC | Enhancement | OptiMOS |
