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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPA028N08N3 G
1+
$4.850
10+
$4.120
100+
$3.570
250+
$3.390
RFQ
572
In-stock
Infineon Technologies MOSFET N-Ch 80V 89A TO220FP-3 20 V Through Hole TO-220FP-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 89 A 2.4 mOhms 2 V 206 nC Enhancement OptiMOS
IXTP270N04T4
1+
$2.810
10+
$2.390
100+
$2.070
250+
$1.970
RFQ
56
In-stock
IXYS MOSFET 40V/270A TrenchT4 Power MOSFET 15 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 270 A 2.4 mOhms 2 V 182 nC Enhancement TrenchT4
IXTH270N04T4
1+
$3.820
10+
$3.240
100+
$2.810
250+
$2.670
RFQ
48
In-stock
IXYS MOSFET 40V/270A TrenchT4 Power MOSFET 15 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 40 V 270 A 2.4 mOhms 2 V 182 nC Enhancement TrenchT4
IPA028N08N3GXKSA1
500+
$3.040
1000+
$2.570
2500+
$2.440
5000+
$2.350
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 80V 89A TO220FP-3 20 V Through Hole TO-220FP-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 80 V 89 A 2.4 mOhms 2 V 206 nC Enhancement OptiMOS
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