- Vgs - Gate-Source Voltage :
- Package / Case :
- Qg - Gate Charge :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,775
In-stock
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Fairchild Semiconductor | MOSFET 60V 240A TO-LL N-Chnl PowerTrench | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 2.9 mOhms | 2 V | 130 nC | Enhancement | PowerTrench | ||||
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1,974
In-stock
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Fairchild Semiconductor | MOSFET Update code D | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 240 A | 2.9 mOhms | 2 V | 130 nC | Enhancement | PowerTrench | ||||
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23,270
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 180 A | 2.9 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
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3,909
In-stock
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Diodes Incorporated | MOSFET Enh Mode FET 41V to 60V TO263 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.9 mOhms | 2 V | 95.4 nC | Enhancement | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 180 A | 2.9 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||||
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2,500
In-stock
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onsemi | MOSFET T6 40V SL DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 101 A | 2.9 mOhms | 2 V | 34.3 nC | Enhancement |