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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPB180N03S4L-H0
1+
$2.000
10+
$2.000
100+
$1.000
500+
$1.000
1000+
$1.000
RFQ
800
In-stock
Infineon Technologies MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 180 A 1.1 mOhms 2 V 176 nC Enhancement OptiMOS
AUIRF7749L2TR
1+
$5.590
10+
$4.750
25+
$4.670
100+
$4.120
4000+
$2.570
RFQ
4,000
In-stock
IR / Infineon MOSFET N-CHANNEL 55 / 60 20 V SMD/SMT DirectFET-L8 - 55 C + 175 C Reel 1 Channel Si N-Channel 60 V 375 A 1.1 mOhms 2 V 275 nC Enhancement  
IPB180N03S4LH0ATMA1
1000+
$1.420
2000+
$1.330
5000+
$1.280
VIEW
RFQ
Infineon Technologies MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 20 V SMD/SMT TO-263-7 - 55 C + 175 C Reel 1 Channel Si N-Channel 40 V 180 A 1.1 mOhms 2 V 176 nC Enhancement  
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