- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,986
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | |||
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1,912
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless, MV7, 60V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 2.2 mOhms | 2 V | 170 nC | Enhancement | PowerTrench | |||
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GET PRICE |
14,250
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET | ||
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3,109
In-stock
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IR / Infineon | MOSFET 100V 127A 6mOhm Automotive MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 127 A | 4.8 mOhms | 2 V | 170 nC | Enhancement | ||||
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759
In-stock
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IR / Infineon | MOSFET MOSFET, 100V, 192A 4.2 mOhm, 170 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 192 A | 4.2 mOhms | 2 V | 170 nC | Enhancement | StrongIRFET |
