- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,543
In-stock
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Fairchild Semiconductor | MOSFET 60V 80A Power56 N-Chnl PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.6 mOhms | 2 V | 55 nC | Enhancement | PowerTrench | ||||
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498
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 9.4 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||||
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GET PRICE |
18,600
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | |||
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2,142
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0031 Ohm typ., 80 A STripFET F7 Power ... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.1 mOhms | 2 V | 55 nC | Enhancement | |||||
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1,101
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | |||||
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492
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 37 A | 9.1 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||||
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570
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 83A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 9.4 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||||
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961
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0031 Ohm typ., 70 A STripFET F7 Power ... | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 70 A | 3.1 mOhms | 2 V | 55 nC | Enhancement | ||||||
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713
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7.2 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0028 Ohm typ., 80 A STripFET F7 Power ... | 20 V | SMD/SMT | H2PAK-6 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 60 V | 80 A | 2.8 mOhms | 2 V | 55 nC | Enhancement | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 0.0025 mOhm typ., 80 A STripFET(TM) VI... | 20 V | SMD/SMT | H2PAK-2 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 3.2 mOhms | 2 V | 55 nC | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 150V 37A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 37 A | 9.1 mOhms | 2 V | 55 nC | Enhancement | OptiMOS | ||||
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137
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 80A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 7 mOhms | 2 V | 55 nC | Enhancement | OptiMOS |