- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,128
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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236
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 89A 10mOhm 65.3nC LogLvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 89 A | 18 mOhms | 2 V | 98 nC | |||||
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961
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 90 A | 3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS | |||
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3,962
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 90A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 90 A | 3.3 mOhms | 2 V | 98 nC | Enhancement | OptiMOS |
