- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 1.1 mOhms (1)
- 1.2 mOhms (2)
- 1.3 mOhms (3)
- 1.4 mOhms (1)
- 1.58 mOhms (1)
- 1.6 mOhms (2)
- 1.7 mOhms (2)
- 1.88 mOhms (1)
- 10.3 mOhms (1)
- 10.6 mOhms (1)
- 10.7 mOhms (2)
- 11 mOhms (2)
- 11.4 mOhms (1)
- 12.3 mOhms (2)
- 15.5 mOhms (2)
- 16 mOhms (3)
- 17.5 mOhms (4)
- 19 mOhms (1)
- 2 mOhms (2)
- 2.1 mOhms (1)
- 2.3 mOhms (5)
- 2.4 mOhms (2)
- 2.7 mOhms (1)
- 2.8 mOhms (2)
- 2.9 mOhms (2)
- 27 mOhms (1)
- 28 mOhms (4)
- 3 mOhms (2)
- 3.2 mOhms (2)
- 3.3 mOhms (4)
- 3.5 mOhms (2)
- 3.6 mOhms (2)
- 3.9 mOhms (2)
- 4 mOhms (2)
- 4.3 mOhms (2)
- 4.4 mOhms (2)
- 4.6 mOhms (4)
- 4.7 mOhms (2)
- 4.9 mOhms (2)
- 5 mOhms (2)
- 5.2 mOhms (2)
- 5.3 mOhms (1)
- 5.7 mOhms (1)
- 5.8 mOhms (2)
- 5.9 mOhms (2)
- 51 mOhms (4)
- 6.2 mOhms (4)
- 7 mOhms (1)
- 7.2 mOhms (3)
- 7.6 mOhms (1)
- 7.9 mOhms (1)
- 8.4 mOhms (2)
- 800 uOhms (1)
- 9.1 mOhms (2)
- 9.4 mOhms (3)
- 9.6 mOhms (4)
- 9.9 mOhms (3)
- 900 uOhms (1)
- Qg - Gate Charge :
-
- 117 nC (8)
- 134 nC (2)
- 137 nC (1)
- 160 nC (1)
- 165 nC (2)
- 176 nC (1)
- 206 nC (8)
- 207 nC (2)
- 211 nC (6)
- 22.4 nC (1)
- 225 nC (1)
- 25 nC (3)
- 250 nC (2)
- 270 nC (1)
- 275 nC (2)
- 286 nC (1)
- 29 nC (9)
- 31 nC (3)
- 32 nC (1)
- 35 nC (6)
- 37 nC (1)
- 41 nC (2)
- 43 nC (1)
- 47 nC (2)
- 49 nC (2)
- 55 nC (7)
- 56 nC (1)
- 65 nC (1)
- 66 nC (2)
- 68 nC (2)
- 69 nC (4)
- 82 nC (6)
- 86 nC (5)
- 87 nC (8)
- 90 nC (1)
- 92 nC (2)
- 93 nC (8)
- 98 nC (4)
120 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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23,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
20,530
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
|
|
3,632
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
3,135
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
2,808
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | |||
|
|
29,260
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 100 A | 5.8 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
29,560
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.6 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
|
4,625
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 50 A | 16 mOhms | 2 V | 31 nC | Enhancement | OptiMOS | |||
|
|
1,907
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
2,465
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 2.3 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
1,837
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | |||
|
|
421
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | |||
|
|
1,254
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | |||
|
|
19,680
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 120 A | 3.2 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
|
|
2,023
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 34A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 28 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
1,320
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 300 A | 1.7 mOhms | 2 V | 207 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
23,270
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 180 A | 2.9 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||
|
|
1,713
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
|
|
452
In-stock
|
Infineon Technologies | MOSFET MV POWER MOS | +/- 20 V | SMD/SMT | HSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 155 A | 5 mOhms | 2 V | 92 nC | Enhancement | OptiMOS | |||
|
|
8,790
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.6 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
GET PRICE |
13,330
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 100A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 3.9 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||
|
|
2,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | OptiMOS | |||
|
|
1,732
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 84A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 84 A | 10.6 mOhms | 2 V | 65 nC | Enhancement | OptiMOS | |||
|
|
589
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 43 A | 5.9 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
990
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | OptiMOS | |||
|
|
7,135
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 2.7 mOhms | 2 V | 66 nC | Enhancement | OptiMOS | |||
|
|
446
In-stock
|
Infineon Technologies | MOSFET N-Ch 200V 88A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 9.9 mOhms | 2 V | 87 nC | Enhancement | OptiMOS | |||
|
|
2,700
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 56A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 56 A | 12.3 mOhms | 2 V | 49 nC | Enhancement | OptiMOS | |||
|
|
517
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 5.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | |||
|
|
1,910
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS |
