- Rds On - Drain-Source Resistance :
-
- 1.1 mOhms (2)
- 1.2 mOhms (1)
- 1.3 mOhms (5)
- 1.4 mOhms (2)
- 1.6 mOhms (3)
- 1.7 mOhms (1)
- 1.8 mOhms (3)
- 11 mOhms (1)
- 2 mOhms (4)
- 2.1 mOhms (1)
- 2.6 mOhms (2)
- 2.7 mOhms (1)
- 2.9 mOhms (2)
- 3.3 mOhms (1)
- 3.5 mOhms (1)
- 3.7 mOhms (2)
- 3.9 mOhms (1)
- 4.3 mOhms (1)
- 5.2 mOhms (2)
- 6.6 mOhms (1)
- 800 uOhms (2)
- 900 uOhms (2)
- Qg - Gate Charge :
- Tradename :
41 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,026
In-stock
|
Fairchild Semiconductor | MOSFET 150V 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 310 A | 2.7 mOhms | 2 V | 217 nC | Enhancement | PowerTrench | ||||
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421
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
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735
In-stock
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Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 460 A | 1.8 mOhms | 2 V | 208 nC | Enhancement | PowerTrench | ||||
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1,254
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 160 A | 3.3 mOhms | 2 V | 117 nC | Enhancement | OptiMOS | ||||
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1,919
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | |||||
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GET PRICE |
23,270
In-stock
|
Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 180 A | 2.9 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | |||
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1,791
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.8 mOhms | 2 V | 167 nC | Enhancement | |||||
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1,076
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 200 nC | Enhancement | |||||
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2,800
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | OptiMOS | ||||
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990
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | OptiMOS | ||||
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2,956
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | |||||
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517
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 130 A | 5.2 mOhms | 2 V | 93 nC | Enhancement | OptiMOS | ||||
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1,115
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.6 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
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512
In-stock
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STMicroelectronics | MOSFET N-CH 80V 17mOhm 180A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 2.1 mOhms | 2 V | 193 nC | Enhancement | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 120V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 120 V | 180 A | 2.9 mOhms | 2 V | 211 nC | Enhancement | OptiMOS | ||||
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753
In-stock
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Infineon Technologies | MOSFET N-CHANNEL 75/80V | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 180 A | 1.8 mOhms | 2 V | 167 nC | Enhancement | |||||
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900
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.6 mOhms | 2 V | 183 nC | Enhancement | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 800 uOhms | 2 V | 286 nC | Enhancement | |||||
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988
In-stock
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STMicroelectronics | MOSFET N-CH 40V 11mOhm 200A STripFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.3 mOhms | 2 V | 240 nC | Enhancement | |||||
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389
In-stock
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Fairchild Semiconductor | MOSFET 80V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 270 A | 4.3 mOhms | 2 V | 178 nC | Enhancement | |||||
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298
In-stock
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Fairchild Semiconductor | MOSFET 60V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 3.5 mOhms | 2 V | 173 nC | Enhancement | |||||
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214
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 6.6 mOhms | 2 V | 84 nC | Enhancement | |||||
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276
In-stock
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Fairchild Semiconductor | MOSFET 100V TO263 7L JEDEC GREEN EMC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 200 A | 11 mOhms | 2 V | 81 nC | Enhancement | |||||
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305
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2 mOhms | 2 V | 206 nC | Enhancement | OptiMOS | ||||
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659
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS 3 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 275 nC | Enhancement | OptiMOS | ||||
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1,045
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 1.4 mOhms | 2 V | 137 nC | Enhancement | |||||
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535
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 3.9 mOhms | 2 V | 114.6 nC | Enhancement | |||||
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385
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 900 uOhms | 2 V | 225 nC | Enhancement | OptiMOS | ||||
|
800
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.1 mOhms | 2 V | 176 nC | Enhancement | OptiMOS | ||||
|
100
In-stock
|
IXYS | MOSFET 40V/340A TrenchT4 Power MOSFET | 15 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 340 A | 1.7 mOhms | 2 V | 256 nC | Enhancement | TrenchT4 |