- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
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- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
800
In-stock
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Vishay Semiconductors | MOSFET 40V 100A 157W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.00225 Ohms | 2.5 V | 145 nC | Enhancement | TrenchFET | |||
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88
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 14 A | 910 mOhms | 2.5 V | 145 nC | Enhancement | ||||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | Through Hole | TO-220AB-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 119 A | 0.0045 Ohms | 2.5 V | 145 nC | Enhancement | |||||
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VIEW | Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 120 A | 0.0045 Ohms | 2.5 V | 145 nC | Enhancement |