- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- 1.6 A (1)
- 10 A (2)
- 100 A (4)
- 119 A (1)
- 120 A (9)
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- 150 A (1)
- 16 A (3)
- 18 A (1)
- 2.4 A (1)
- 2.6 A (2)
- 20.2 A (2)
- 200 A (1)
- 23.8 A (2)
- 24.8 A (2)
- 25 A (5)
- 27 A (1)
- 3.2 A (2)
- 30 A (4)
- 31 A (4)
- 32 A (1)
- 35 A (1)
- 36 A (2)
- 37.9 A (2)
- 38 A (2)
- 39 A (2)
- 4.4 A (1)
- 4.8 A (2)
- 40 A (2)
- 46 A (1)
- 48 A (1)
- 50 A (4)
- 53 A (2)
- 53.5 A (2)
- 56 A (2)
- 57 A (1)
- 6.6 A (1)
- 6.9 A (2)
- 60 A (7)
- 77.5 A (2)
- 83.2 A (2)
- 85 A (1)
- Rds On - Drain-Source Resistance :
-
- 0.0014 Ohms (1)
- 0.0015 Ohms (2)
- 0.00225 Ohms (1)
- 0.0024 Ohms (1)
- 0.0028 Ohms (1)
- 0.003 Ohms (7)
- 0.0045 Ohms (2)
- 0.0046 Ohms (2)
- 0.0063 Ohms (1)
- 0.0078 Ohms (1)
- 0.0079 Ohms (2)
- 0.01 Ohms (1)
- 0.012 Ohms (2)
- 0.016 Ohms (1)
- 0.021 Ohms (1)
- 0.023 Ohms (1)
- 0.027 Ohms (1)
- 0.028 Ohms (1)
- 0.038 Ohms (1)
- 0.041 Ohms (2)
- 0.07 Ohms (1)
- 0.078 Ohms (1)
- 0.24 Ohms (1)
- 1.26 Ohms (4)
- 1.8 Ohms (1)
- 10.5 mOhms (1)
- 100 mOhms (2)
- 11 mOhms (1)
- 11.2 mOhms (1)
- 110 mOhms (4)
- 140 mOhms (2)
- 17.9 mOhms (1)
- 170 mOhms (4)
- 180 mOhms (2)
- 2.45 mOhms (1)
- 2.6 mOhms (1)
- 2.7 Ohms (2)
- 22 mOhms (1)
- 220 mOhms (2)
- 250 mOhms (2)
- 320 mOhms (2)
- 33 mOhms (2)
- 37 mOhms (2)
- 4 mOhms (1)
- 40 mOhms (3)
- 620 mOhms (2)
- 63 mOhms (4)
- 68 mOhms (2)
- 860 mOhms (2)
- 89 mOhms (2)
- 90 mOhms (6)
- Qg - Gate Charge :
-
- 10.5 nC (1)
- 105 nC (4)
- 116 nC (2)
- 119 nC (2)
- 120 nC (1)
- 124 nC (1)
- 127 nC (2)
- 13 nC (1)
- 130 nC (1)
- 135 nC (2)
- 144 nC (1)
- 145 nC (3)
- 165 nC (1)
- 170 nC (4)
- 180 nC (2)
- 190 nC (6)
- 20 nC (1)
- 25 nC (3)
- 270 nC (3)
- 290 nC (2)
- 3.4 nC (1)
- 310 nC (2)
- 33 nC (1)
- 330 nC (2)
- 35 nC (3)
- 36 nC (2)
- 4.3 nC (2)
- 42 nC (2)
- 43 nC (4)
- 45 nC (1)
- 47.2 nC (2)
- 50 nC (2)
- 51 nC (2)
- 55 nC (1)
- 6.7 nC (1)
- 60 nC (1)
- 62 nC (1)
- 63 nC (3)
- 68 nC (1)
- 70 nC (3)
- 75 nC (2)
- 8.2 nC (2)
- 80 nC (5)
- 85 nC (2)
- 9.4 nC (2)
- 96 nC (2)
- Tradename :
95 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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2,397
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 150V SO-8 | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 0.07 Ohms | 2.5 V | 33 nC | Enhancement | ||||
|
|
1,371
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 36A TO247-3 CoolMOS C3 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 2.5 V | 270 nC | Enhancement | CoolMOS | |||
|
|
1,277
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77.5 A | 37 mOhms | 2.5 V | 290 nC | Enhancement | CoolMOS | |||
|
|
2,990
In-stock
|
Vishay Semiconductors | MOSFET 100V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 32 A | 0.021 Ohms | 2.5 V | 63 nC | Enhancement | TrenchFET | |||
|
|
GET PRICE |
46,800
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | ||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 53A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 53 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
|
|
542
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||
|
|
334
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 53.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 53.5 A | 63 mOhms | 2.5 V | 170 nC | Enhancement | CoolMOS | |||
|
|
666
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 30A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 110 mOhms | 2.5 V | 96 nC | Enhancement | CoolMOS | |||
|
|
671
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 60A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 60 A | 40 mOhms | 2.5 V | 190 nC | Enhancement | CoolMOS | |||
|
|
1,973
In-stock
|
Vishay Semiconductors | MOSFET 150V 25A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 25 A | 0.038 Ohms | 2.5 V | 51 nC | Enhancement | TrenchFET | |||
|
|
242
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 77.5A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 77.5 A | 37 mOhms | 2.5 V | 290 nC | Enhancement | CoolMOS | |||
|
|
11,930
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.6 A | 0.24 Ohms | 2.5 V | 3.4 nC | Enhancement | ||||
|
|
3,742
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | |||
|
|
2,467
In-stock
|
Vishay Semiconductors | MOSFET 40V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | |||
|
|
1,993
In-stock
|
Siliconix / Vishay | MOSFET N Ch 80Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 150 A | 0.0024 Ohms | 2.5 V | 144 nC | Enhancement | ||||
|
|
206
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 83.2A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 83.2 A | 33 mOhms | 2.5 V | 330 nC | Enhancement | CoolMOS | |||
|
|
7,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 25A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 110 mOhms | 2.5 V | 70 nC | Enhancement | CoolMOS | |||
|
|
197
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 68 mOhms | 2.5 V | 116 nC | Enhancement | CoolMOS | |||
|
|
3,510
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 23.8A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23.8 A | 140 mOhms | 2.5 V | 75 nC | Enhancement | CoolMOS | |||
|
|
678
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 20.2A TO247-3 CoolMOS E6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20.2 A | 170 mOhms | 2.5 V | 63 nC | Enhancement | CoolMOS | |||
|
|
733
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 100V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 0.003 Ohms | 2.5 V | 190 nC | Enhancement | TrenchFET | |||
|
|
568
In-stock
|
Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 220 mOhms | 2.5 V | 36 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
24,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 38A TO247-3 CoolMOS C6 | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37.9 A | 90 mOhms | 2.5 V | 119 nC | Enhancement | CoolMOS | ||
|
|
770
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0015 Ohms | 2.5 V | 310 nC | Enhancement | TrenchFET | ||||
|
|
1,906
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | |||
|
|
230
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 39A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 39 A | 68 mOhms | 2.5 V | 116 nC | Enhancement | CoolMOS | |||
|
|
175
In-stock
|
Infineon Technologies | MOSFET AUTOMOTIVE | +/- 20 V | Through Hole | TO-247-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
200
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 31A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | |||
|
|
542
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 200V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 200 V | 60 A | 0.028 Ohms | 2.5 V | 135 nC | Enhancement | TrenchFET |
