- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
-
- - 12 A (1)
- 10 A (1)
- 10.1 A (1)
- 10.6 A (4)
- 100 A (3)
- 11.1 A (1)
- 12.5 A (1)
- 130 A (1)
- 14.1 A (2)
- 15 A (1)
- 15.1 A (1)
- 16.1 A (4)
- 17 A (1)
- 18.1 A (2)
- 180 A (1)
- 2 A (1)
- 2.4 A (1)
- 2.6 A (2)
- 22 A (1)
- 25 A (2)
- 260 A (1)
- 270 A (1)
- 3.1 A (1)
- 3.2 A (3)
- 3.6 A (2)
- 3.7 A (1)
- 30 A (1)
- 300 A (1)
- 39 A (1)
- 4 A (1)
- 4.3 A (1)
- 4.4 A (1)
- 4.5 A (2)
- 4.8 A (2)
- 43 A (1)
- 5.6 A (1)
- 5.7 A (1)
- 5.8 A (1)
- 50 A (2)
- 55 A (1)
- 6 A (2)
- 6.6 A (2)
- 6.8 A (2)
- 63 A (4)
- 65 A (1)
- 7 A (1)
- 7.3 A (2)
- 7.6 A (2)
- 70 A (1)
- 8.5 A (1)
- 80 A (2)
- 9 A (4)
- 9.1 A (1)
- 9.3 A (1)
- 9.9 A (1)
- 99 A (2)
- Rds On - Drain-Source Resistance :
-
- 0.0028 Ohms (1)
- 0.003 Ohms (1)
- 0.0046 Ohms (2)
- 0.038 Ohms (1)
- 0.29 Ohms (1)
- 1 Ohms (1)
- 1.15 Ohms (1)
- 1.26 Ohms (5)
- 1.5 Ohms (1)
- 1.8 Ohms (3)
- 1.9 mOhms (2)
- 10 mOhms (2)
- 12 mOhms (1)
- 13.7 mOhms (1)
- 14 mOhms (2)
- 16 mOhms (1)
- 18 mOhms (1)
- 2 Ohms (1)
- 2.4 mOhms (1)
- 2.7 Ohms (2)
- 230 mOhms (4)
- 250 mOhms (2)
- 28 mOhms (3)
- 3 mOhms (1)
- 3.3 mOhms (1)
- 3.4 Ohms (1)
- 3.7 mOhms (1)
- 30 mOhms (1)
- 300 mOhms (1)
- 320 mOhms (1)
- 340 mOhms (4)
- 35 mOhms (1)
- 350 mOhms (4)
- 360 mOhms (2)
- 4.3 mOhms (1)
- 450 mOhms (1)
- 460 mOhms (2)
- 490 mOhms (1)
- 5.2 mOhms (1)
- 540 mOhms (4)
- 590 mOhms (2)
- 6.8 mOhms (3)
- 66 mOhms (1)
- 660 mOhms (1)
- 680 mOhms (1)
- 720 mOhms (1)
- 740 mOhms (1)
- 800 mOhms (1)
- 850 mOhms (1)
- 855 mOhms (2)
- 860 mOhms (4)
- 890 mOhms (1)
- Qg - Gate Charge :
-
- 10 nC (1)
- 10.5 nC (5)
- 105 nC (1)
- 11 nC (1)
- 12.4 nC (1)
- 124 nC (1)
- 13 nC (3)
- 130 nC (1)
- 14 nC (1)
- 14.3 nC (1)
- 140 nC (1)
- 15 nC (3)
- 15.3 nC (2)
- 16 nC (1)
- 16.1 nC (1)
- 16.4 nC (1)
- 160 nC (1)
- 17.2 nC (2)
- 18.7 nC (1)
- 20 nC (2)
- 20.5 nC (2)
- 22 nC (3)
- 23 nC (3)
- 24.8 nC (2)
- 25 nC (2)
- 26 nC (1)
- 28 nC (1)
- 29 nC (1)
- 32 nC (2)
- 32.6 nC (2)
- 33 nC (2)
- 34 nC (3)
- 36 nC (1)
- 38 nC (1)
- 39 nC (4)
- 4.3 nC (2)
- 4.7 nC (1)
- 40 nC (1)
- 44 nC (2)
- 45 nC (3)
- 48 nC (1)
- 49 nC (1)
- 51 nC (1)
- 6 nC (2)
- 6.7 nC (1)
- 6.8 nC (1)
- 61 nC (1)
- 7.4 nC (1)
- 75 nC (1)
- 76 nC (1)
- 8.2 nC (2)
- 85 nC (2)
- 9.4 nC (2)
- Tradename :
- Applied Filters :
87 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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2,345
In-stock
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IR / Infineon | MOSFET MOSFT 80V 39A 28mOhm 22nC Log Lvl | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 39 A | 28 mOhms | 2.5 V | 33 nC | |||||
|
|
7,603
In-stock
|
IR / Infineon | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 12 mOhms | 2.5 V | 34 nC | |||||
|
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5,435
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 2.5 V | 32 nC | Enhancement | CoolMOS | |||
|
|
8,510
In-stock
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Infineon Technologies | MOSFET 60V 1 N-CH HEXFET 6.8mOhms 33nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 99 A | 6.8 mOhms | 2.5 V | 33 nC | Enhancement | ||||
|
|
41,780
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 20.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.3 A | 540 mOhms | 2.5 V | 20.5 nC | Enhancement | CoolMOS | |||
|
|
3,738
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 5.2 mOhms | 2.5 V | 40 nC | Enhancement | ||||
|
|
3,930
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 63 A | 14 mOhms | 2.5 V | 48 nC | |||||||
|
|
1,973
In-stock
|
Vishay Semiconductors | MOSFET 150V 25A 136W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 25 A | 0.038 Ohms | 2.5 V | 51 nC | Enhancement | TrenchFET | |||
|
|
2,500
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 44 nC | Enhancement | CoolMOS | |||
|
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3,742
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | |||
|
|
5,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 5.7A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 5.7 A | 680 mOhms | 2.5 V | 17.2 nC | Enhancement | CoolMOS | |||
|
|
2,467
In-stock
|
Vishay Semiconductors | MOSFET 40V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | |||
|
|
163
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 16.1A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 16.1 A | 230 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
|
|
2,360
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
2,490
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10.6 A | 340 mOhms | 2.5 V | 39 nC | Enhancement | CoolMOS | |||
|
|
2,712
In-stock
|
Fairchild Semiconductor | MOSFET SuperFET2 800V 850mOhm Zener | 20 V, 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.4 Ohms | 2.5 V | 7.4 nC | Enhancement | SuperFET II | |||
|
|
1,319
In-stock
|
Infineon Technologies | MOSFET 100V HEXFET 14mOhms 15nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 63 A | 16 mOhms | 2.5 V | 34 nC | Enhancement | ||||
|
|
2,026
In-stock
|
STMicroelectronics | MOSFET P-CH 30V 0.024Ohm 12A STripFET VI | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 12 A | 30 mOhms | 2.5 V | 26 nC | |||||
|
|
2,477
In-stock
|
Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.2 A | 1.26 Ohms | 2.5 V | 9.4 nC | Enhancement | CoolMOS | |||
|
|
3,300
In-stock
|
onsemi | MOSFET NFET DPAK 60V 17A 64MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 17 A | 66 mOhms | 2.5 V | 14 nC | |||||
|
|
1,906
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | |||
|
|
616
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 300A 1.9mOhm 110nC LogLv7 | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 A | 1.9 mOhms | 2.5 V | 160 nC | |||||||
|
|
2,427
In-stock
|
Infineon Technologies | MOSFET N-Ch 700V 3.2A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 3.2 A | 1.26 Ohms | 2.5 V | 10.5 nC | Enhancement | CoolMOS | |||
|
|
GET PRICE |
4,820
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||
|
|
2,490
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode FET 100Vds 20Vgs 125W | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 55 A | 28 mOhms | 2.5 V | 36 nC | Enhancement | ||||
|
|
891
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | |||
|
|
2,433
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 99A 6.8mOhm 33nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 99 A | 6.8 mOhms | 2.5 V | 49 nC | |||||||
|
|
GET PRICE |
55,900
In-stock
|
onsemi | MOSFET SuperFET2 800V 850mOhm Zener | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 850 mOhms | 2.5 V | 22 nC | Enhancement | SuperFET II | ||
|
|
242
In-stock
|
IR / Infineon | MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 270 A | 2.4 mOhms | 2.5 V | 140 nC | |||||||
|
|
GET PRICE |
9,760
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STri... | 10 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 18 mOhms | 2.5 V | 25 nC | Enhancement |
