- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,070
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V RDS ON 25 mOhm | - 10 V, + 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1200 V | 90 A | 25 mOhms | 2.4 V | 406 nC | Enhancement | ||||
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350
In-stock
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Texas instruments | MOSFET 100V N-Channel NexFET Pwr MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 100 V | 100 A | 16.3 mOhms | 2.4 V | 16.4 nC | NexFET | ||||
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40
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Screw Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 48 A | 40 mOhms | 2.4 V | 115 nC | Enhancement |
