- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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90
In-stock
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IXYS | MOSFET 120 Amps 200V 0.022 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 120 A | 22 mOhms | 5 V | 152 nC | Enhancement | PolarHT, HiPerFET | |||
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68
In-stock
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IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT, HiPerFET | |||
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59
In-stock
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IXYS | MOSFET 130Amps 200V | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 130 A | 16 mOhms | 5 V | 150 nC | Enhancement | ||||
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56
In-stock
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IXYS | MOSFET 74 Amps 200V 0.034 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 74 A | 34 mOhms | 5 V | 107 nC | Enhancement | PolarHT, HiPerFET | |||
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40
In-stock
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IXYS | MOSFET Polar HiperFET Power MOSFET | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 200 V | 170 A | 14 mOhms | 5 V | 185 nC | Enhancement | Polar, HiPerFET | ||||
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VIEW | IXYS | MOSFET 96 Amps 200V 0.024 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 96 A | 24 mOhms | 5 V | 145 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 75 Amps 200V 0.018 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 90 A | 22 mOhms | 5 V | 240 nC | Enhancement | PolarHT, ISOPLUS247, HiPerFET |
