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Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFX140N30P
1+
$15.540
10+
$14.290
25+
$13.700
100+
$12.070
RFQ
1,088
In-stock
IXYS MOSFET 140 Amps 300V 0.024 Ohm Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 140 A 24 mOhms 5 V 185 nC Enhancement Polar, HiPerFET
IXFR140N30P
1+
$16.840
10+
$15.480
25+
$14.840
100+
$13.080
RFQ
126
In-stock
IXYS MOSFET 82 Amps 300V 0.026 Ohm Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 70 A 26 mOhms 5 V 185 nC Enhancement Polar, HiPerFET
IXFX120N25P
1+
$11.000
10+
$10.120
25+
$9.700
100+
$8.550
RFQ
25
In-stock
IXYS MOSFET 120 Amps 250 V 0.24 Ohm Rds 20 V Through Hole TO-247-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 250 V 120 A 24 mOhms 5 V 185 nC Enhancement PolarHT, HiPerFET
IXFX170N20P
1+
$16.900
10+
$15.540
25+
$14.900
100+
$13.130
RFQ
40
In-stock
IXYS MOSFET Polar HiperFET Power MOSFET 20 V Through Hole TO-247-3 - 55 C + 175 C Tube   Si N-Channel 200 V 170 A 14 mOhms 5 V 185 nC Enhancement Polar, HiPerFET
IXFH100N25P
30+
$7.860
120+
$6.820
270+
$6.520
510+
$5.940
VIEW
RFQ
IXYS MOSFET 100 Amps 250V 0.027 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 100 A 27 mOhms 5 V 185 nC Enhancement PolarHT, HiPerFET
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