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- Package / Case :
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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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272
In-stock
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onsemi | MOSFET GAN 600V 9A 290MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 9 A | 350 mOhms | 1.6 V | 6.2 nC | Enhancement | |||
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99
In-stock
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onsemi | MOSFET GAN 600V 17A 150MO | 18 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | GaN | N-Channel | 600 V | 17 A | 340 mOhms | 1.6 V | 6.2 nC | Enhancement | |||
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3,171
In-stock
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onsemi | MOSFET NFET DPAK 400V 1.7A 5.5OH | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 1.7 A | 4.5 Ohms | 1.6 V | 5.5 nC | ||||
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302
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A TO220-5 | 20 V | Through Hole | TO-220-5 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement |
