- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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992
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 18 mOhms | 1.6 V | 60 nC | Enhancement | |||
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302
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A TO220-5 | 20 V | Through Hole | TO-220-5 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | |||
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337
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | |||
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4,973
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 15.9 mOhms | 1.6 V | 33 nC | Enhancement |
