- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
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15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,825
In-stock
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IR / Infineon | MOSFET MOSFT 30V 78A 3.2mOhm 36nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 30 V | 150 A | 4.2 mOhms | 36 nC | ||||||||
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682
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V | 25 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC | |||||||
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1,440
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 160 mOhms | 3 V | 36 nC | Enhancement | MDmesh | |||
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481
In-stock
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STMicroelectronics | MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh M5 | 650 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC | |||||||
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568
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 220 mOhms | 2.5 V | 36 nC | Enhancement | CoolMOS | |||
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504
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 43A TO220FP-3 OptiMOS 3 | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 43 A | 9.3 mOhms | 36 nC | Enhancement | OptiMOS | ||||
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79
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
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66
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
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40
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
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145
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 9.2mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 87 A | 7.8 mOhms | 36 nC | Enhancement | ||||||
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30
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 20 A | 300 mOhms | 3 V to 5 V | 36 nC | Enhancement | HyperFET | ||||
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823
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 60 V | 50 A | 9 mOhms | 4 V | 36 nC | Enhancement | OptiMOS | |||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 150 mOhms | 3 V | 36 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 220 mOhms | 2.5 V | 36 nC | Enhancement | CoolMOS | |||
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496
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5 | 650 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC |
