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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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868
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
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671
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
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281
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | |||||
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5,546
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 45 A | 6 mOhms | 3 V | 36 nC | PowerTrench Power Clip | |||||
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776
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 22 A | 150 mOhms | 3 V | 36 nC | Enhancement | |||||
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1,440
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 160 mOhms | 3 V | 36 nC | Enhancement | MDmesh | ||||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 150 mOhms | 3 V | 36 nC | Enhancement | |||||
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1,574
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS |