- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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281
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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568
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 220 mOhms | 2.5 V | 36 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 220 mOhms | 2.5 V | 36 nC | Enhancement | CoolMOS | |||
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496
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh M5 | 650 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC |
