- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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868
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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671
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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281
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-247-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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5,546
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 45 A | 6 mOhms | 3 V | 36 nC | PowerTrench Power Clip | ||||
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3,591
In-stock
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IR / Infineon | MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 86 A | 5.5 mOhms | 36 nC | Enhancement | Directfet | ||||
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5,028
In-stock
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Infineon Technologies | MOSFET 150V SINGLE N-CH 31mOhms 33nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 10 A | 31 mOhms | 3 V to 5 V | 36 nC | Enhancement | ||||
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2,885
In-stock
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IR / Infineon | MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 12 A | 7.6 mOhms | 36 nC | Enhancement | Directfet | ||||
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776
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 22 A | 150 mOhms | 3 V | 36 nC | Enhancement | ||||
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1,440
In-stock
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STMicroelectronics | MOSFET N-Ch 650 V 0.160 Ohm 18 A MDmesh(TM) M5 | 25 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 18 A | 160 mOhms | 3 V | 36 nC | Enhancement | MDmesh | |||
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4,102
In-stock
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onsemi | MOSFET Pwr MOSFET 30V 65A 4.2mOhm SGL N-CH | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 67 A | 3.4 mOhms | 1.3 V | 36 nC | Enhancement | ||||
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568
In-stock
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Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 220 mOhms | 2.5 V | 36 nC | Enhancement | CoolMOS | |||
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79
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
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66
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
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40
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
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30
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 20 A | 300 mOhms | 3 V to 5 V | 36 nC | Enhancement | HyperFET | ||||
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GET PRICE |
12,419
In-stock
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Texas instruments | MOSFET 60V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 5.8 mOhms | 1.8 V | 36 nC | NexFET | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 650V 18A MDmesh M5 0.19Ohm | 25 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 18 A | 190 mOhms | 4 V | 36 nC | |||||
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1,150
In-stock
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Texas instruments | MOSFET 60V N-channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 5.8 mOhms | 1.5 V | 36 nC | Enhancement | NexFET | |||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 150 mOhms | 3 V | 36 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 13A TO247-3 CoolMOS CP | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 220 mOhms | 2.5 V | 36 nC | Enhancement | CoolMOS | |||
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2,294
In-stock
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IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 128 A | 4.8 mOhms | 2 V | 36 nC | Enhancement | StrongIRFET | |||
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420
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 170 A | 3.2 mOhms | 1.35 V to 2.35 V | 36 nC | Enhancement | ||||
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1,574
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS |
