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Vgs - Gate-Source Voltage :
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFP22N65X2
1+
$3.600
10+
$3.060
100+
$2.660
250+
$2.520
RFQ
100
In-stock
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 22 A 160 mOhms 2.7 V 38 nC Enhancement  
IXFA22N65X2
1+
$3.760
10+
$3.200
100+
$2.770
250+
$2.630
RFQ
185
In-stock
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 30 V Through Hole TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 22 A 160 mOhms 2.7 V 38 nC Enhancement  
IXFH22N65X2
1+
$4.660
10+
$3.960
100+
$3.440
250+
$3.260
RFQ
98
In-stock
IXYS MOSFET MOSFET 650V/22A Ultra Junction X2 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 22 A 160 mOhms 2.7 V 38 nC Enhancement  
CSD19531KCS
1+
$1.900
10+
$1.700
25+
$1.620
100+
$1.370
RFQ
156
In-stock
Texas instruments MOSFET 100V 6.4mOhm Pwr MOSFET 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 200 A 7.7 mOhms 2.7 V 38 nC Enhancement NexFET
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